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Get Competitive Quote IRFBC40ASPBF by Vishay Pcs of Electronic Components Part

Mfg Part Number: IRFBC40ASPBF Manufacturer: Vishay Pcs Description: MOSFET, Power,N-Ch,VDSS 600V,RDS(ON) 1.2 Ohms,ID 6.2A,D2Pak,PD 125W,VGS +/-30V
Main Category: Electronic Components Category: Discrete Semiconductors

If you are looking for a great deal on high-quality Discrete Semiconductors parts like MOSFET, Power,N-Ch,VDSS 600V,RDS(ON) 1.2 Ohms,ID 6.2A,D2Pak,PD 125W,VGS +/-30V, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number IRFBC40ASPBF, was manufactured by Vishay Pcs and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for IRFBC40ASPBF, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less. 

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At Industrial Part Numbers, we offer numerous Electronic Components parts from leading manufacturers like Vishay Pcs. Furthermore, as AS9120B, ISO 9001:2015, and FAA AC 00-56B certified and accredited distributor, we stand by the quality of our inventory. In addition, we are the only independent distributor with a No China Sourcing pledge, meaning your order is fully traceable and ships with its qualifying certificates, as applicable. Submit a quote for IRFBC40ASPBF - MOSFET, Power,N-Ch,VDSS 600V,RDS(ON) 1.2 Ohms,ID 6.2A,D2Pak,PD 125W,VGS +/-30V today, and see why many customers choose us as their number one distributor. 

Product Attribute of IRFBC40ASPBF
Channel Type N
Configuration Single
Dimensions 10.67 x 9.65 x 4.83 mm
Drain Current 6.2 A
Drain to Source On Resistance 1.2 O
Drain to Source Voltage 600 V
Forward Transconductance 3.4 S
Forward Voltage, Diode 1.5 V
Gate to Source Voltage 30 V
Height 0.19" (4.83mm)
Input Capacitance 1036 pF @ 25 V
Length 0.42" (10.67mm)
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Type Surface Mount
Number of Elements per Chip 1
Number of Pins 3
Package Type D2PAK
Polarization N-Channel
Power Dissipation 125 W
Product Header Hexfet Power MOSFET
Series IRF Series
Temperature Operating Range -55 to +150 C
Total Gate Charge 42 nC
Turn Off Delay Time 31 ns
Turn On Delay Time 13 ns
Typical Gate Charge @ Vgs Maximum of 42 nC @ 10 V
Voltage, Breakdown, Drain to Source 600 V
Width 0.38" (9.65mm)

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