| Mfg Part Number: TP0610K-T1-E3 | Alternate P/N: TP0610KT1E3 | Manufacturer: Siliconix Vishay |
| Description: MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc | Main Category: Electronic Components | Category: Discrete Semiconductors |
If you are looking for a great deal on high-quality Discrete Semiconductors parts like MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number TP0610K-T1-E3, was manufactured by Siliconix Vishay and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for TP0610K-T1-E3, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
At Industrial Part Numbers, we offer numerous Electronic Components parts from leading manufacturers like Siliconix Vishay. Furthermore, as AS9120B, ISO 9001:2015, and FAA AC 00-56B certified and accredited distributor, we stand by the quality of our inventory. In addition, we are the only independent distributor with a No China Sourcing pledge, meaning your order is fully traceable and ships with its qualifying certificates, as applicable. Submit a quote for TP0610K-T1-E3 - MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc today, and see why many customers choose us as their number one distributor.
| Product Attribute of TP0610K-T1-E3 | |
|---|---|
| Channel Type | P |
| Configuration | Single |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Drain Current | -115 mA |
| Drain to Source Voltage | -60 V |
| Forward Transconductance | 80 S |
| Forward Voltage, Diode | -1.4 V |
| Gate to Source Voltage | 20 V |
| Length | 0.119" (3.04mm) |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | TO-236 |
| Polarization | P-Channel |
| Power Dissipation | 350 W |
| Product Header | P-Channel MOSFET |
| Series | TP Series |
| Total Gate Charge | 1.7 nC |
| Turn On Delay Time | 20 ns |
| Typical Gate Charge @ Vgs | 1.7 nC @ -15 V |
| Voltage, Breakdown, Drain to Source | -60 V |
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