Mfg Part Number: SI3469DV-T1-E3 | Alternate P/N: SI3469DVT1E3 | Manufacturer: Siliconix Vishay |
Description: P-CHANNEL 20-V (D-S) MOSFET | Main Category: Electronic Components | Category: Discrete Semiconductors |
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Product Attribute of SI3469DV-T1-E3 | |
---|---|
Channel Type | P |
Configuration | Quad Drain |
Dimensions | 3.1 x 1.7 x 1 mm |
Drain Current | -4 A |
Drain to Source On Resistance | 0.051 O |
Drain to Source Voltage | -20 V |
Forward Transconductance | 15 S |
Forward Voltage, Diode | -1.2 V |
Gate to Source Voltage | 20 V |
Height | 0.039" (1mm) |
Length | 0.122" (3.1mm) |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 6 |
Package Type | TSOP-6 |
Power Dissipation | 1.14 W |
Series | SI34 Series |
Temperature Operating Range | -55 to +150 C |
Turn Off Delay Time | 50 ns |
Turn On Delay Time | 10 ns |
Typical Gate Charge @ Vgs | 20 nC @ -10 V |
Width | 0.067" (1.7mm) |
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