Mfg Part Number: NTE4151PT1G | Manufacturer: On Semiconductor | Description: MOSFET, P-Ch, VDSS -20V, RDS(ON) 0.26Ohm, ID -760mA, SC-89, PD 313mW, VGS +/-6V |
Main Category: Electronic Components | Category: Discrete Semiconductors |
If you are looking for a great deal on high-quality Discrete Semiconductors parts like MOSFET, P-Ch, VDSS -20V, RDS(ON) 0.26Ohm, ID -760mA, SC-89, PD 313mW, VGS +/-6V, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number NTE4151PT1G, was manufactured by On Semiconductor and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for NTE4151PT1G, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
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Product Attribute of NTE4151PT1G | |
---|---|
Channel Type | P |
Configuration | Single |
Drain Current | -760 mA |
Drain to Source On Resistance | 0.26 O |
Drain to Source Voltage | -20 V |
Forward Transconductance | 0.4 |
Forward Voltage, Diode | -0.72 V |
Gate to Source Voltage | 6 V |
Length | 0.066" (1.68mm) |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Package Type | SC-89 |
Polarization | P-Channel |
Power Dissipation | 313 mW |
Product Header | P-Channel Small Signal MOSFET |
Series | NT MOSFET Series |
Temperature Operating Range | -55 to +150 C |
Total Gate Charge | 2.1 nC |
Turn Off Delay Time | 29 ns |
Turn On Delay Time | 8 ns |
Voltage, Breakdown, Drain to Source | -20 V |
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