| Mfg Part Number: MJ11016G | Manufacturer: On Semiconductor | Description: ON Semi MJ11016G NPN Darlington Transistor 30 A 120 V HFE:200 3-Pin TO-204 |
| Main Category: Electronic Components | Category: Discrete Semiconductors |
If you are looking for a great deal on high-quality Discrete Semiconductors parts like ON Semi MJ11016G NPN Darlington Transistor 30 A 120 V HFE:200 3-Pin TO-204, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number MJ11016G, was manufactured by On Semiconductor and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for MJ11016G, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
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| Product Attribute of MJ11016G | |
|---|---|
| Base Current | 1 A |
| Collector to Emitter Voltage | 120 V |
| Continuous Collector Current | 30 A |
| Dimensions | 39.37 x 8.51 x 26.67 mm |
| Height | 1.05" (26.67mm) |
| Length | 1.55" (39.37mm) |
| Minimum Operating Temperature | -55 C |
| Number of Elements per Chip | 2 |
| Output Current | 30 A |
| Package Type | TO-3 |
| Power Dissipation | 200 W |
| Product Header | High Current Complementary Bipolar Silicon Transistor |
| Temperature Operating Range | -55 to +200 C |
| Type | High Current, Power |
| Voltage, Saturation, Base to Emitter | 5 V |
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