| Mfg Part Number: NTE102A | Manufacturer: Nte Electronics Inc | Description: Transistor, Bipolar,Ge,PNP,Amplifier, Power,IC 1A,PD 650mW,TO-1,VCBO 32V,hFE 295 |
| Main Category: Electronic Components | Category: Discrete Semiconductors |
If you are looking for a great deal on high-quality Discrete Semiconductors parts like Transistor, Bipolar,Ge,PNP,Amplifier, Power,IC 1A,PD 650mW,TO-1,VCBO 32V,hFE 295, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number NTE102A, was manufactured by Nte Electronics Inc and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for NTE102A, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
At Industrial Part Numbers, we offer numerous Electronic Components parts from leading manufacturers like Nte Electronics Inc. Furthermore, as AS9120B, ISO 9001:2015, and FAA AC 00-56B certified and accredited distributor, we stand by the quality of our inventory. In addition, we are the only independent distributor with a No China Sourcing pledge, meaning your order is fully traceable and ships with its qualifying certificates, as applicable. Submit a quote for NTE102A - Transistor, Bipolar,Ge,PNP,Amplifier, Power,IC 1A,PD 650mW,TO-1,VCBO 32V,hFE 295 today, and see why many customers choose us as their number one distributor.
| Product Attribute of NTE102A | |
|---|---|
| Amplifier Type | Medium Power |
| Collector Current | 1 A |
| Collector to Base Voltage | 32 V |
| Collector to Emitter Voltage | 10 V |
| Configuration | Common Base |
| Diameter | 6.09 mm |
| Dimensions | 6.09 Dia. x 10.4 H mm |
| Emitter to Base Voltage | 10 V |
| Height | 0.409" (10.4mm) |
| Material | Si |
| Maximum Operating Temperature | +90 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating Frequency | 2.3 MHz |
| Package Type | TO-1 |
| Polarity | PNP |
| Power Dissipation | 650 mW |
| Primary Type | Ge |
| Product Header | Germanium Complementary Transistor |
| Series | Transistor Series |
| Temperature Operating Range | -55 to +90 °C |
| Transistor Polarity | PNP |
| Transistor Type | PNP |
| Type | Amplifier, Power |
| UPC Code | 768249005414 |
| Voltage, Collector to Emitter, Saturation | 0.17 V |
| Voltage, Saturation, Collector to Emitter | 0.17 V |
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