| Mfg Part Number: IRF7452PBF | Manufacturer: Infineon | Description: MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 0.06Ohm,ID 4.5A,SO-8,PD 2.5W,VGS+/-30V,-55C |
| Main Category: Electronic Components | Category: Discrete Semiconductors |
If you are looking for a great deal on high-quality Discrete Semiconductors parts like MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 0.06Ohm,ID 4.5A,SO-8,PD 2.5W,VGS+/-30V,-55C, look no further than Industrial Part Numbers. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number IRF7452PBF, was manufactured by Infineon and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for IRF7452PBF, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
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| Product Attribute of IRF7452PBF | |
|---|---|
| Channel Type | P |
| Configuration | Quad Drain, Triple Source |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | 4.5 A |
| Drain to Source On Resistance | 0.06 O |
| Drain to Source Voltage | 100 V |
| Forward Transconductance | 3.4 S |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | 30 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 930 pF @ 25 V |
| Length | 0.196" (5mm) |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Polarization | N-Channel |
| Power Dissipation | 2.5 W |
| Product Header | Hexfet Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 C |
| Total Gate Charge | 33 nC |
| Turn Off Delay Time | 16 ns |
| Turn On Delay Time | 9.5 ns |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 100 V |
| Width | 0.157" (4mm) |
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